February 11, 2014 - Infineon Technologies AG (Frankfurt Stock Exchange: IFX / US Counter Market: IFNNY) has launched a new line of LTE low noise amplifiers designed to increase smartphone data rates ( LNA) and quad-band LNA Bank.
LTE (also known as 4G) is the latest standard for wireless communications, supporting data rates up to 300 Mbit/s, while the latest UMTS (3G) version only supports 56 Mbit/s. This significantly reduces the load time of smartphones and Internet connections, significantly increasing the comfort and satisfaction of smartphone users.
However, using current mobile devices to meet user expectations for high data rates for LTE remains challenging. The increased complexity of the RF front end requires the use of more RF components (such as RF switches, duplexers, and splitters). This will result in increased losses throughout the system and a reduction in signal to noise ratio (SNR). Moreover, the distance between the antenna and the RF transceiver results in additional line loss, which can also have a negative impact on the signal-to-noise ratio (SNR), which in turn reduces the data rate.
The Infineon BGA7x1N6 and BGM7xxxx4L12 series offer low noise figure, precise gain and high linearity to help smartphone designers overcome these difficulties. These products use Infineon's advanced SiGe (silicon germanium) chip technology with built-in ESD protection.
Both the new LNA and LNA Bank can be placed on the smartphone's diversity and main antenna path to increase system sensitivity and ensure an optimal user experience. They support 96% more data rates than LNA-free solutions and fully exploit the potential of LTE. Even with poor antenna isolation and large line losses between the antenna and the transceiver, the high linearity of the new device family ensures optimum reception performance. Typical sensitivity is increased by 3.4 dB compared to systems without an LNA, while the required device size is 61% smaller (1.9 mm x 1.1 mm) than the previously available LNA Bank.
Supply and packaging
Infineon offers three LTE LNAs and seven quad-band LNA Ban series to meet the bandwidth requirements of different regions of the world. Each letter in the series represents a different frequency band (L stands for low frequency, 0.7 to 1.0 GHz band; M stands for intermediate frequency, 1.7 to 2.2 GHz band; H stands for high frequency, 2.3 to 2.7 GHz band).
· BGA7L1N6
· BGA7M1N6
· BGA7H1N6
· BGM7LLHM4L12
· BGM7LLMM4L12
· BGM7MLLH4L12
· BGM7MLLM4L12
· BGM7LMHM4L12
· BGM7HHMH4L12
· BGM7MHLL4L12
Equipment is shipped in RONS-compliant TSNP-6-2 or TSLP 12-4 plastic packaging.
About Infineon
Infineon Technologies AG, based in Neubiberg, Germany, provides semiconductor and system solutions for the three technological challenges of modern society – energy efficiency, mobility and security. In fiscal 2013 (as of September 30), the company achieved sales of 3.84 billion euros and employs nearly 26,700 people worldwide. Infineon is currently listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and the US Over-the-Counter (OTCQX) InternaTIonal Premier (ticker symbol: IFNNY).
Infineon in China
Infineon Technologies AG officially entered the Chinese market in 1995. Since the establishment of the first company in Wuxi in 1996, Infineon's business has grown very rapidly. With more than 1,700 employees in China, it has become an important driving force for Infineon's Asia Pacific and global business development. Infineon has established a complete industrial chain covering R&D, production, sales, marketing and technical support in China, and has carried out in-depth research with leading domestic enterprises and universities in sales, technology research and development, and personnel training. Cooperation.
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