China successfully developed 6-inch silicon carbide wafers with an annual output of 70,000
From 2 inches, 3 inches, 4 inches to today's 6-inch silicon carbide single crystal substrate, Chen Xiaolong team spent more than 10 years, the first in China to achieve independent research and development and industrialization of silicon carbide single crystal substrate.
Not long ago, researcher Chen Xiaolong of the Institute of Physics of the Chinese Academy of Sciences cooperated with Beijing Tianke Heda Blu-ray Semiconductor Co., Ltd. (hereinafter referred to as Tianke Heda) to solve the 6-inch diameter expansion technology and wafer processing technology, and successfully developed 6 inches. Silicon carbide single crystal substrate.
From 2 inches, 3 inches, 4 inches to today's 6-inch silicon carbide single crystal substrate, Chen Xiaolong team spent more than 10 years, the first in China to achieve independent research and development and industrialization of silicon carbide single crystal substrate.
The third generation of semiconductor material <br> <br> researchers say, the fifties and sixties, silicon and germanium semiconductor material constituting the first generation, mainly used in low voltage, low frequency, the power transistors and photodetectors. Compared with germanium semiconductor devices, semiconductor devices fabricated from silicon materials have better high temperature and radiation resistance.
By the late 1960s, more than 95% of semiconductors and 99% of integrated circuits were fabricated from silicon semiconductor materials. Until now, most of the semiconductor products we use are based on silicon materials.
After entering the 1990s, gallium arsenide and indium phosphide represent the second generation of semiconductor materials that can be used to make high-speed, high-frequency, high-power, and light-emitting electronic devices. Due to the rise of information highways and the Internet, second-generation semiconductor materials are widely used in satellite communications, mobile communications, optical communications, and GPS navigation.
Compared to the first two generations of semiconductor materials, third-generation semiconductor materials are often referred to as wide-bandgap semiconductor materials or high-temperature semiconductor materials. Among them, silicon carbide and gallium nitride are well-established representatives in the third generation of semiconductor materials.
It is known that silicon carbide single crystal is a wide bandgap semiconductor material with large forbidden band width, strong critical breakdown field, high thermal conductivity and high saturation drift speed. It is widely used in the production of high temperature and high frequency. And high power electronics.
Regarding gallium nitride, it has been reported that a 2-inch GaN wafer can produce 10,000 ç› brightness for energy-saving lamps 10 times, luminous efficiency for energy-saving lamps 3-4 times, and life expectancy 10 times higher than energy-saving lamps. Brightness LED lighting; 5,000 blue lasers with an average price of around $100 can also be manufactured; they can also be used in power electronics to reduce system energy consumption by more than 30%.
Due to the small lattice mismatch between silicon carbide and gallium nitride, silicon carbide single crystal is an ideal substrate material for devices such as gallium nitride-based LEDs, Schottky diodes, and gold oxide half field effect transistors. The Chen Xiaolong Research Group (Functional Crystal Research and Application Center) of the Advanced Materials and Structure Analysis Laboratory of the Institute of Physics has long been engaged in the research of silicon carbide single crystal growth.
Break large size of the wafer for a gallium nitride <br> <br> although the best growth gallium nitride single crystal substrate is a material which not only can greatly improve the crystal quality of the epitaxial film, reducing the dislocation density, but also Improve device operating life, operating current density and luminous efficiency. However, the preparation of gallium nitride bulk single crystal materials is very difficult, and so far there has not been an effective method.
To this end, researchers grow gallium nitride thick films on other substrates (such as silicon carbide), and then separate the substrate and gallium nitride thick film by stripping technology. The separated gallium nitride thick film can be used as epitaxial. Substrate. Despite the epitaxy of a gallium nitride thick film as a substrate, the bit error density is significantly lower than that of a gallium nitride film epitaxially grown on a silicon carbide material, but it is expensive.
Therefore, the Chen Xiaolong team chose the silicon carbide single crystal substrate research. He pointed out that silicon carbide single crystal substrates have many outstanding advantages, such as good chemical stability, good electrical conductivity, good thermal conductivity, and no absorption of visible light, but they are also insufficient, such as the price is too high.
Silicon carbide is also known as gold steel sand or refractory sand. Silicon carbide is made of quartz sand, petroleum coke (or coal char), wood chips (which need to be salted when green silicon carbide is produced) and is smelted in a resistance furnace at a high temperature. The silicon carbide single crystal is a third-generation high-temperature wide-bandgap semiconductor material.
In the early years, the price of silicon carbide wafers in the global market was very expensive. The international market price of a 2-inch silicon carbide wafer was as high as $500 (2006), but it is still in short supply. High raw material costs account for more than 10% of the price of silicon carbide semiconductor devices. "The price of silicon carbide wafers has become the bottleneck for the development of the third-generation semiconductor industry." Chen Xiaolong said.
In order to reduce the cost of the device, the downstream industry has put forward a large size requirement for the silicon carbide single crystal substrate. Therefore, the use of advanced silicon carbide crystal growth technology to achieve large-scale production, reduce the cost of silicon carbide wafer production, will promote the rapid development of the third-generation semiconductor industry, expand market demand.
Tianke Heda has developed a silicon carbide crystal growth furnace and silicon carbide crystal growth, processing technology and professional equipment, and established a complete silicon carbide wafer production line.
Over the years, Tianke Heda has been committed to improving the quality of silicon carbide crystals and the development of large-size silicon carbide crystals, industrializing advanced silicon carbide crystal growth and processing technologies, and mass production and sales of silicon carbide with independent intellectual property rights. Wafer.
Not long ago, researcher Chen Xiaolong of the Institute of Physics of the Chinese Academy of Sciences cooperated with Beijing Tianke Heda Blu-ray Semiconductor Co., Ltd. (hereinafter referred to as Tianke Heda) to solve the 6-inch diameter expansion technology and wafer processing technology, and successfully developed 6 inches. Silicon carbide single crystal substrate.
From 2 inches, 3 inches, 4 inches to today's 6-inch silicon carbide single crystal substrate, Chen Xiaolong team spent more than 10 years, the first in China to achieve independent research and development and industrialization of silicon carbide single crystal substrate.
The third generation of semiconductor material <br> <br> researchers say, the fifties and sixties, silicon and germanium semiconductor material constituting the first generation, mainly used in low voltage, low frequency, the power transistors and photodetectors. Compared with germanium semiconductor devices, semiconductor devices fabricated from silicon materials have better high temperature and radiation resistance.
By the late 1960s, more than 95% of semiconductors and 99% of integrated circuits were fabricated from silicon semiconductor materials. Until now, most of the semiconductor products we use are based on silicon materials.
After entering the 1990s, gallium arsenide and indium phosphide represent the second generation of semiconductor materials that can be used to make high-speed, high-frequency, high-power, and light-emitting electronic devices. Due to the rise of information highways and the Internet, second-generation semiconductor materials are widely used in satellite communications, mobile communications, optical communications, and GPS navigation.
Compared to the first two generations of semiconductor materials, third-generation semiconductor materials are often referred to as wide-bandgap semiconductor materials or high-temperature semiconductor materials. Among them, silicon carbide and gallium nitride are well-established representatives in the third generation of semiconductor materials.
It is known that silicon carbide single crystal is a wide bandgap semiconductor material with large forbidden band width, strong critical breakdown field, high thermal conductivity and high saturation drift speed. It is widely used in the production of high temperature and high frequency. And high power electronics.
Regarding gallium nitride, it has been reported that a 2-inch GaN wafer can produce 10,000 ç› brightness for energy-saving lamps 10 times, luminous efficiency for energy-saving lamps 3-4 times, and life expectancy 10 times higher than energy-saving lamps. Brightness LED lighting; 5,000 blue lasers with an average price of around $100 can also be manufactured; they can also be used in power electronics to reduce system energy consumption by more than 30%.
Due to the small lattice mismatch between silicon carbide and gallium nitride, silicon carbide single crystal is an ideal substrate material for devices such as gallium nitride-based LEDs, Schottky diodes, and gold oxide half field effect transistors. The Chen Xiaolong Research Group (Functional Crystal Research and Application Center) of the Advanced Materials and Structure Analysis Laboratory of the Institute of Physics has long been engaged in the research of silicon carbide single crystal growth.
Break large size of the wafer for a gallium nitride <br> <br> although the best growth gallium nitride single crystal substrate is a material which not only can greatly improve the crystal quality of the epitaxial film, reducing the dislocation density, but also Improve device operating life, operating current density and luminous efficiency. However, the preparation of gallium nitride bulk single crystal materials is very difficult, and so far there has not been an effective method.
To this end, researchers grow gallium nitride thick films on other substrates (such as silicon carbide), and then separate the substrate and gallium nitride thick film by stripping technology. The separated gallium nitride thick film can be used as epitaxial. Substrate. Despite the epitaxy of a gallium nitride thick film as a substrate, the bit error density is significantly lower than that of a gallium nitride film epitaxially grown on a silicon carbide material, but it is expensive.
Therefore, the Chen Xiaolong team chose the silicon carbide single crystal substrate research. He pointed out that silicon carbide single crystal substrates have many outstanding advantages, such as good chemical stability, good electrical conductivity, good thermal conductivity, and no absorption of visible light, but they are also insufficient, such as the price is too high.
Silicon carbide is also known as gold steel sand or refractory sand. Silicon carbide is made of quartz sand, petroleum coke (or coal char), wood chips (which need to be salted when green silicon carbide is produced) and is smelted in a resistance furnace at a high temperature. The silicon carbide single crystal is a third-generation high-temperature wide-bandgap semiconductor material.
In the early years, the price of silicon carbide wafers in the global market was very expensive. The international market price of a 2-inch silicon carbide wafer was as high as $500 (2006), but it is still in short supply. High raw material costs account for more than 10% of the price of silicon carbide semiconductor devices. "The price of silicon carbide wafers has become the bottleneck for the development of the third-generation semiconductor industry." Chen Xiaolong said.
In order to reduce the cost of the device, the downstream industry has put forward a large size requirement for the silicon carbide single crystal substrate. Therefore, the use of advanced silicon carbide crystal growth technology to achieve large-scale production, reduce the cost of silicon carbide wafer production, will promote the rapid development of the third-generation semiconductor industry, expand market demand.
Tianke Heda has developed a silicon carbide crystal growth furnace and silicon carbide crystal growth, processing technology and professional equipment, and established a complete silicon carbide wafer production line.
Over the years, Tianke Heda has been committed to improving the quality of silicon carbide crystals and the development of large-size silicon carbide crystals, industrializing advanced silicon carbide crystal growth and processing technologies, and mass production and sales of silicon carbide with independent intellectual property rights. Wafer.
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