Plessey orders Ai Siqiang MOCVD system for high-brightness LED chips
On June 12, Ai Siqiang announced that Plessey Semiconductors Ltd has ordered a new MOCVD system from it. The order is the first of a series of CRIUS® II-XL reactors from Plessey's line of 7x6-inch wafers ready for production. These reactors will be used to produce high-brightness GaN-on-Si. LED chip.
Plessey pointed out that the CRIUS® II-XL reactor will lay the foundation for the full production of LED materials. The company plans to use Plessey's LED brand MAGIC (MAnufactured on GaNICs) on large-area silicon substrates using a 6-inch integrated circuit production line in Plymouth. Axon's latest CRIUS® technology has many advantages over its requirements, such as the most cost-effective technology for producing gallium nitride epitaxial layers on 6-inch silicon substrates and 8-inch silicon substrates.
Ai Siqiang said that he is fully prepared to help solve the various technical challenges brought by Plessey and look forward to witnessing the new wave of LED market.
It is reported that Plessey announced plans to introduce low-cost "MAGIC" ultra-high brightness LED products in the next six months to replace the incandescent bulb market. The company also plans to develop a range of smart lighting products that combine Plessey's existing unique sensing and control technologies.
Plessey said it has the ability to produce world-class LEDs and introduce low-cost, high-performance LED lighting products that are in urgent need of the market. In February 2012, the company successfully acquired Cam GaN, a derivative company of Cambridge University, and is now working to build a comprehensive commercial development capability for silicon-based GaN technology. In addition, Plessey plans to begin early trial production by the end of the third quarter of 2012 and achieve full production by the second quarter of 2013.
Plessey pointed out that the CRIUS® II-XL reactor will lay the foundation for the full production of LED materials. The company plans to use Plessey's LED brand MAGIC (MAnufactured on GaNICs) on large-area silicon substrates using a 6-inch integrated circuit production line in Plymouth. Axon's latest CRIUS® technology has many advantages over its requirements, such as the most cost-effective technology for producing gallium nitride epitaxial layers on 6-inch silicon substrates and 8-inch silicon substrates.
Ai Siqiang said that he is fully prepared to help solve the various technical challenges brought by Plessey and look forward to witnessing the new wave of LED market.
It is reported that Plessey announced plans to introduce low-cost "MAGIC" ultra-high brightness LED products in the next six months to replace the incandescent bulb market. The company also plans to develop a range of smart lighting products that combine Plessey's existing unique sensing and control technologies.
Plessey said it has the ability to produce world-class LEDs and introduce low-cost, high-performance LED lighting products that are in urgent need of the market. In February 2012, the company successfully acquired Cam GaN, a derivative company of Cambridge University, and is now working to build a comprehensive commercial development capability for silicon-based GaN technology. In addition, Plessey plans to begin early trial production by the end of the third quarter of 2012 and achieve full production by the second quarter of 2013.
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