Ai Siqiang introduces 5x200mm silicon-based GaN growth equipment AIX G5+
On July 24th, Ai Siqiang Co., Ltd. launched the latest product AIX G5+ to provide 5x200 mm silicon-based GaN growth equipment for its AIX G5 planetary reactor platform. Based on a customer-centric development program, Acetron's R&D lab developed the technology and designed and manufactured the product, including specially designed reactor hardware and processes. The product is now available as part of the AIX G5 series, so all existing G5 systems can be upgraded to this new device.
Ai Siqiang said that silicon-based GaN technology is the technology of choice in many emerging power electronics market segments, and has good prospects for future low-cost, high-performance LED products. Chip size and materials are critical to the cost-effectiveness of the manufacturing process, so the transition to a 200 mm standard silicon chip will be a reasonable trend for future growth with its unique cost advantages.
Ai Siqiang said that it has undergone repeated numerical simulations to design new basic components that are compatible with the existing AIX G5 reactor platform and that are capable of meeting the unique process performance of the 5x200 mm process. The extremely stable process that is ultimately achieved provides more uniform material characteristics and higher device yields than any other MOCVD platform, while also having a chip production capacity of 5x200 mm.
Many of Axon's customers have pointed out that all 5x200 mm chips have a fully rotationally symmetrical uniform shape, a standard thickness of silicon-based substrates, and tightly controlled chip curvature, all in line with their required silicon production needs.
Ai Siqiang said that silicon-based GaN technology is the technology of choice in many emerging power electronics market segments, and has good prospects for future low-cost, high-performance LED products. Chip size and materials are critical to the cost-effectiveness of the manufacturing process, so the transition to a 200 mm standard silicon chip will be a reasonable trend for future growth with its unique cost advantages.
Ai Siqiang said that it has undergone repeated numerical simulations to design new basic components that are compatible with the existing AIX G5 reactor platform and that are capable of meeting the unique process performance of the 5x200 mm process. The extremely stable process that is ultimately achieved provides more uniform material characteristics and higher device yields than any other MOCVD platform, while also having a chip production capacity of 5x200 mm.
Many of Axon's customers have pointed out that all 5x200 mm chips have a fully rotationally symmetrical uniform shape, a standard thickness of silicon-based substrates, and tightly controlled chip curvature, all in line with their required silicon production needs.
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