New Material Industry Development Plan Releases LED Related Material Selected
On February 22, the Ministry of Industry and Information Technology released the "12th Five-Year Development Plan for New Materials Industry" (hereinafter referred to as "Planning"). The "Planning" elaborated and explained the current situation and trends of the new materials industry, the overall thinking, the future development priorities, how the regional layout, major projects and key projects organized during the "Twelfth Five-Year Plan" period, and related safeguard measures. LED-related gallium arsenide single-crystal materials, sapphire materials, silicon carbide wafers, and gallium nitride epitaxial wafers were selected into the "12th Five-Year Plan" key product list of new materials, and became the focus of new materials development in the "12th Five-Year Plan".
As one of the key development areas for new materials, semiconductor materials will focus on high purity, large size, low defectivity, high performance, and low cost, gradually increasing the self-sufficiency rate of key materials, and developing electronic grade polysilicon, large-size single crystal silicon, and polishing wafers. Materials such as silicon nitride, gallium arsenide, silicon carbide, indium phosphide, germanium, and silicon on insulator (SOI), and new types of copper indium gallium selenide, copper indium sulfide, cadmium telluride, etc. Thin film photovoltaic materials promote the industrialization of high-efficiency, low-cost photovoltaic materials.
"Planning" proposes that by 2015, it is necessary to establish a new material industry system with certain independent innovation capabilities, a large scale, and a complete set of industries, to break through key materials and technologies that are urgently needed by a group of countries and lead the future development, and cultivate a batch of The backbone enterprises with strong innovation ability and core competitiveness form a group of new material industrial bases with rational layout, distinctive features, and industrial agglomeration.
As one of the key development areas for new materials, semiconductor materials will focus on high purity, large size, low defectivity, high performance, and low cost, gradually increasing the self-sufficiency rate of key materials, and developing electronic grade polysilicon, large-size single crystal silicon, and polishing wafers. Materials such as silicon nitride, gallium arsenide, silicon carbide, indium phosphide, germanium, and silicon on insulator (SOI), and new types of copper indium gallium selenide, copper indium sulfide, cadmium telluride, etc. Thin film photovoltaic materials promote the industrialization of high-efficiency, low-cost photovoltaic materials.
"Planning" proposes that by 2015, it is necessary to establish a new material industry system with certain independent innovation capabilities, a large scale, and a complete set of industries, to break through key materials and technologies that are urgently needed by a group of countries and lead the future development, and cultivate a batch of The backbone enterprises with strong innovation ability and core competitiveness form a group of new material industrial bases with rational layout, distinctive features, and industrial agglomeration.
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