Cree Introduces S-Band GaN Devices

Cree announces the availability of high-efficiency GaN HEMT transistors for military and commercial S-band radars. The new S-band GaN HEMT transistors are rated at 60W and have a frequency range of 3.1 to 3.5 GHz, providing superior drain efficiency (nearly 70%) compared to traditional Si or GaAs MESFET devices. At the same time, the combination of high efficiency and high power density helps minimize heat dissipation and reduces size and weight in commercial radar system applications.
Jim Milligan, Director of Radio Frequency (RF) and Microwave Division, said: "The introduction of the new S-band GaN HEMT devices enriches Cree's highly efficient S-band GaN transistors and monolithic microwave integrated circuit (MMIC) product families. Commercial radar systems offer more options in high-power amplifier circuits. High-efficiency S-band GaN HEMT device rates can help with extended signal fidelity while maximizing signal fidelity and minimizing thermal management requirements. Wireless RF design engineers drastically reduce the size and weight of radar systems while expanding the range of applications and reducing installation costs."
The Cree CGH35060 GaN HEMT transistor has a nominal pulse power of 60W at 28V (when the pulse width is 100 microseconds), a power gain of 12dB, and a drain efficiency of 65%, which is 50% higher than conventional silicon LDMOS devices. . The CGH35060 GaN device has been validated in a high power amplifier reference design (S-band frequency between 3.1 and 3.5 GHz). Compared to GaAs and Si technologies, the CGH35060 features long pulse, high power performance (less than 0.6dB), excellent signal fidelity, and very low power attenuation.
The new GaN HEMT transistors are matched to the full range of Cree S-band products, including the CGH31240F/CGH35240F fully matched 240W GaN HEMT devices (2.7 – 2.9GHz / 3.1 – 3.5GHz) and the CMPA2735075F two-package GaN HEMT monolithic microwave integrated circuit ( MMIC).

Battery BMS

Battery safety is the critical factor that users consider when they are used for different applications. Because of the high reactivity of Lithium Battery, at the heart of each lithium battery pack is a BMS (battery management system) to ensure battery safety. UFO POWER has been in the lithium battery industry for more than ten years. We have our own R&D team and provide Standard BMS and Smart BMS to cater to your specific requirement.

Multiple BMS Function


- Overcharge protection
- Over discharge protection
- Over current protection
- Temperature protection
- Short circuit protection
- Charging balance function
- Cell capacity estimation function

What is a UFO BMS equipped with?


- RS232/RS485 Communication Interfaces
- LED Indicators
- Memory Function
- Dry Contact Function (optional)
- LCD Display Function (optional)

- Total Capacity Function: Total discharge capacity Ah and total discharge energy Wh


UFO Lithium Battery BMS



The Function of Communication Interface

● RS232 Communication Interface
BMS can communicate with the host computer through the RS232 interface, so as to monitor the battery information at the upper computer terminal, including battery voltage, current, temperature, state, SOC, SOH and battery production information, etc.

● RS485 Communication Interface
With RS485 interface, when the LiFePO4 Battery Pack is used in parallel, the main battery pack communicates with the slave battery ack through RS485 communication interface,so all the battery pack information can be viewed through the RS232 on the main Pack.

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ShenZhen UFO Power Technology Co., Ltd. , https://www.ufobattery.com